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 Cree(R) EZ000TM LEDs
Data Sheet CxxxEZ000-Sxx000
Cree's EZBrightTM LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree's proprietary optical design and device submount technology to deliver superior value for highintensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these LEDs are die-attachable with conductive epoxy, solder paste or solder preforms, as well as the flux eutectic method. These vertically structured, low forward voltage LED chips are approximately 100 microns in height. Cree's EZTM chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications such as general illumination, automotive lighting, and LCD backlighting.
FEATURES
* EZBright LED Technology - - - - * * * * 200 mW min. - 450, 460 & 470 nm 300 mW min. - 450, 460 & 470 nm 80 mW min. - 527 nm 130 mW min. - 527 nm
APPLICATIONS
* General Illumination - - - - * * * * Aircraft Decorative Lighting Task Lighting Outdoor Illumination
Lambertian Radiation Conductive Epoxy, Solder Paste or Preforms, or Flux Eutectic Attach Thin 100 m Chip Low Forward Voltage
White LEDs LCD Backlighting Projection Displays Automotive
CxxxEZ000-Sxx000 Chip Diagram
Top View
EZBright LED 980 x 980 m2
Bottom View
Die Cross Section
.A CPR3CR Rev Data Sheet:
Cathodes (-) 130 x 130 m2
t = 100 m Backside Metalization Anode (+) 3 m AuSn
Gold Bond Pads (2)
Subject to change without notice. www.cree.com
Maximum Ratings at TA = 5C Note DC Forward Current Peak Forward Current (1/10 duty cycle @ 1 kHz) LED Junction Temperature Reverse Voltage Operating Temperature Range Storage Temperature Range Typical Electrical/Optical Characteristics at TA = 5C, If = 350 mA Part Number Forward Voltage (Vf, V) Min. C450EZ1000-Sxx000 C460EZ1000-SXX000 C470EZ1000-Sxx000 C527EZ1000-Sxx000 Mechanical Specifications Description P-N Junction Area (m) Chip Area (m) Chip Thickness (m) Top Au Bond Pad (m) - Qty. 2 Au Bond Pad Thickness (m) Back Contact Metal Area (m) Back Contact Metal Thickness (m) 2.9 2.9 2.9 3.1 Typ. 3.3 3.3 3.3 3.5 Max. 3.8 3.8 3.8 4.0
Note
CxxxEZ000-Sxx000 1000 mA 1250 mA 145C 5V -40C to +100C -40C to +125C
Reverse Current [I(Vr=5V), A] Max. 2 2 2 2
Full Width Half Max (D, nm) Typ. 20 21 22 35 CxxxEZ000-Sxx000 Dimensions 950 x 950 980 x 980 100 130 x 130 3.0 980 x 980 3.0 Tolerance 25 25 25 +25/-10 1.0 25 1.0
Notes:
1.
2.
Maximum ratings are package-dependent. The above ratings were determined using a Au-plated TO39 header without an encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325C (< 5 seconds). See Cree EZBright Applications Note for assembly-process information. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics were measured in an integrating sphere using Illuminance E.
Copyright (c) 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc.
CPR3CR Rev. A
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com
Standard Bins for CxxxEZ000-Sxx000
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxEZ1000-Sxx000) orders may be filled with any or all bins (CxxxEZ1000-0xxx) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 350 mA. Radiant flux values are measured using Au-plated TO39 headers without an encapsulant.
Blue EZ000
EZ-00 Radiant Flux 300 mW
C450EZ1000-0113
C450EZ000-S0000
C450EZ1000-0114 C450EZ1000-0110 C450EZ1000-0106 C450EZ1000-0115 C450EZ1000-0111 C450EZ1000-0107 C450EZ1000-0116 C450EZ1000-0112 C450EZ1000-0108
270 mW
C450EZ1000-0109
240 mW
C450EZ1000-0105
200 mW 445 nm
447.5 nm
450 nm Dominant Wavelength
452.5 nm
455 nm
300 mW Radiant Flux
C460EZ1000-0113
C460EZ000-S0000
C460EZ1000-0114 C460EZ1000-0110 C460EZ1000-0106 C460EZ1000-0115 C460EZ1000-0111 C460EZ1000-0107 C460EZ1000-0116 C460EZ1000-0112 C460EZ1000-0108
270 mW
C460EZ1000-0109
240 mW
C460EZ1000-0105
200 mW 455 nm
457.5 nm
460 nm Dominant Wavelength C470EZ000-S0000
462.5 nm
465 nm
300 mW Radiant Flux
C470EZ1000-0113
C470EZ1000-0114 C470EZ1000-0110 C470EZ1000-0106
C470EZ1000-0115 C470EZ1000-0111 C470EZ1000-0107
C470EZ1000-0116 C470EZ1000-0112 C470EZ1000-0108
270 mW
C470EZ1000-0109
240 mW
C470EZ1000-0105
200 mW 465 nm
467.5 nm
470 nm Dominant Wavelength
472.5 nm
475 nm
Copyright (c) 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc.
3
CPR3CR Rev. A
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com
Standard Bins for CxxxEZ000-Sxx000 (continued)
EZ-300 Radiant Flux 380 mW 340 mW
C450EZ1000-0121 C450EZ1000-0117
C450EZ000-S30000
C450EZ1000-0122 C450EZ1000-0118 C450EZ1000-0123 C450EZ1000-0119 C450EZ1000-0124 C450EZ1000-0120
300 mW 445 nm
447.5 nm
450 nm Dominant Wavelength C460EZ000-S30000
452.5 nm
455 nm
Radiant Flux
380 mW 340 mW
C460EZ1000-0121 C460EZ1000-0117
C460EZ1000-0122 C460EZ1000-0118
C460EZ1000-0123 C460EZ1000-0119
C460EZ1000-0124 C460EZ1000-0120
300 mW 455 nm
457.5 nm
460 nm Dominant Wavelength C470EZ000-S30000
462.5 nm
465 nm
Radiant Flux
380 mW 340 mW
C470EZ1000-0121 C470EZ1000-0117
C470EZ1000-0122 C470EZ1000-0118
C470EZ1000-0123 C470EZ1000-0119
C470EZ1000-0124 C470EZ1000-0120
300 mW 465 nm
467.5 nm
470 nm Dominant Wavelength
472.5 nm
475 nm
Green EZ000
EZ-80 Radiant Flux C57EZ000-S08000
C527EZ1000-0111 C527EZ1000-0112 C527EZ1000-0109 C527EZ1000-0106 C527EZ1000-0113 C527EZ1000-0110 C527EZ1000-0107
130 mW 115 mW
C527EZ1000-0108
100 mW
C527EZ1000-0105
80 mW 520 nm
525 nm 530 nm Dominant Wavelength C57EZ000-S3000
535 nm
EZ-30
Radiant Flux
150 mW
C527EZ1000-0114
C527EZ1000-0115
C527EZ1000-0116
130 mW 520 nm
525 nm 530 nm Dominant Wavelength
535 nm
Copyright (c) 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc.
4
CPR3CR Rev. A
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com
Characteristic Curves, TA = 5C
This is a representative measurement for the EZ1000 LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins.
1000 900 800 700
Forward Current vs Forward Voltage
460nm 527nm
100%
Relative Light Intensity vs Junction Temperature
95% 90% 85% 80% 75% 70% 25 50 460nm 527nm
If (mA)
600 500 400 300 200 100 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Relative Light Intensity (%)
Vf (V)
Junction Temperature (C)
75
100
125
150
220 200
Relative Intensity vs Forward Current
Dominant Wavelength Shift vs Junction Temperature
4.0 3.0 2.0 1.0 0.0
% Relative Intensity
160 140 120 100 80 60 40 20 0 0 100
460nm 527nm
Wavelength Shift (nm)
180
460nm 527nm
-1.0 -2.0
200
300
400
If (mA)
500
600
700
800
900
1000
25
50
Junction Temperature (C)
75
100
125
150
Dominant Wavelength Shift vs Forward Current
10.0 8.0 6.0
0.0
Voltage Shift vs Junction Temperature
460nm 527nm
Shift (nm)
4.0 2.0 0.0
460nm 527nm
-2.0 -4.0 -6.0 -8.0
0 100 200 300 400
If (mA)
500
600
700
800
900
1000
Voltage Shift (V)
-0.1
-0.2
-0.3
-0.4 25 50
Junction Temperature (C)
75
100
125
150
Copyright (c) 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc.
5
CPR3CR Rev. A
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com
Radiation Pattern
This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for each chip.
Copyright (c) 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc.
6
CPR3CR Rev. A
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com


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